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The present invention relates to semiconductor devices, and more particularly, to the formation of a plurality of active regions by a single ion implantation process.
2. Description of the Related Art
The demand for semiconductor devices with increased integration and increased operating speed has led to a rapid increase in the number of semiconductor devices being fabricated on a single silicon wafer. This increase is facilitated by current submicron technology, which permits the formation of a number of semiconductor devices on a single wafer. However, as the number of semiconductor devices on a single wafer increases, it becomes increasingly difficult to form individual semiconductor devices in the semiconductor device because of a reduction in available space on the wafer.
In order to decrease the size of the individual semiconductor devices, a multi-device process has been developed in which a single semiconductor wafer is used to form a plurality of active regions. Each active region has a number of individual semiconductor devices, and a number of interconnection layers are formed on the wafer to interconnect the active regions. This permits a smaller footprint of an integrated circuit compared to a single device process.
It is very important to improve the performance of semiconductor devices while decreasing the size of active regions. In this regard, the layout of an active region formed
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